施硅量对甜荞倒伏及产量的影响

doi:10.3864/j.issn.0578-1752.2018.14.004

Abstract

Abstract: 【Objective】 This study was aimed to obtain the optimum silicon fertilizer application rate by studying lodging and yield related factors of common buckwheat (F. esculentum), so as to provide a theoretical basis for productive, stable yield and lodging resistance cultivation. 【Method】 The field experiments with five levels of silicon fertilizer treatments (SiO₂ application rates of CK, S1, S2, S3 and S4 were 0, 100, 200, 300 and 400 kg·hm^-2) were conducted in 2015 and 2016 at the Xiema Experimental Station, Southwest University, China. Ningqiao 1, a moderate lodging resistance cultivar of common buckwheat, was used in this study. The silicon content in root and culm, lodging and yield related factors were measured and analyzed. 【Result】 (1) The silicon content in root was more than that of culm; the silicon content in root increased and then decreased from full bloom to maturity stage, and the maximum value obtained at filling stage. The silicon content in root increased gradually with the increase of silicon application rate. The silicon content in culm increased from full bloom to maturity stage and it was increased and then decreased with the increase of silicon application rate. (2) The total root length, total root surface area, average root diameter and number of root tips increased gradually from full bloom stage to maturity stage. The total root surface area increased with the increase of silicon application rate. The average root diameter and number of root tips increased and then decreased with the increase of silicon application rate, and the maximum value obtained under the S2 treatment. (3) Length, diameter, fresh weight and breaking resistance of the base second internode of culm increased from full bloom to maturity stage. The length and diameter of the base second internode of culm increased with the increase of silicon application rate. The fresh weight and breaking resistance of the base second internode of culm increased and then decreased with the increase of silicon application rate, and the maximum value was obtained under the S3 treatment. (4) The lignin content increased from full bloom to maturity stage. 4CL, PAL, and CAD (4-coumarate: CoA ligase, phenylalanine ammonia-lyase and cinnamyl alcohol dehydrogenase) activity increased and then decreased from full bloom to maturity stage, and the maximum value obtained at filling stage. The lignin content and 4CL, PAL, CAD activity increased and then decreased with the increase of silicon fertilizer application rate, and the maximum value obtained under the S3 treatment. (5) Silicon fertilizer reduced the lodging degree and decreased the lodging percentage significantly. The lodging stage of common buckwheat occurred at maturity when silicon fertilizer application rate ranged from 300 to 400 kg·hm^-2. (6) The yield, grain weight per plant and thousand grain weight increased and then decreased with the increase of silicon fertilizer application rate and grain number per plant increased with the increase of silicon fertilizer application rate. 【Conclusion】 In this research, the best silicon application rate was 300 kg·hm^-2.

Key words: common buckwheat, silicon, root, culm, lodging resistance

SHE HengZhi, NIE Jiao, LI YingShuang, ZHANG YuKe, HUANG KeHui, ZHANG YuanLi, FANG XiaoMei, RUAN RenWu, YI ZeLin. Effects of Silicon Application Rate on Common Buckwheat Lodging and Yield[J].Scientia Agricultura Sinica, 2018, 51(14): 2664-2674.

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