中国农业科学 ›› 2018, Vol. 51 ›› Issue (14): 2664-2674.doi: 10.3864/j.issn.0578-1752.2018.14.004

• 耕作栽培·生理生化·农业信息技术 • 上一篇    下一篇

施硅量对甜荞倒伏及产量的影响

佘恒志,聂蛟,李英双,张玉珂,黄科慧,张园莉,方小梅,阮仁武,易泽林   

  1. 西南大学农学与生物科技学院,重庆 400715
  • 收稿日期:2018-01-15 出版日期:2018-07-16 发布日期:2018-07-16
  • 通讯作者: 易泽林,E-mail:yzlin1969@126.com
  • 作者简介:佘恒志,E-mail:1799413338@qq.com。聂蛟,E-mail:1542227964@qq.com。佘恒志和聂蛟为同等贡献作者。
  • 基金资助:
    中央高校基本业务费专项资金(XDJK2017D071,XDJK2018C051)、重庆市荞麦产业体系(CQCYT2018001)、重庆市民生项目(cstc2017shms- xdny80024)、重庆市社会事业与民生保障科技创新重点项目(cstc2018jscx-mszdx0009)

Effects of Silicon Application Rate on Common Buckwheat Lodging and Yield

SHE HengZhi, NIE Jiao, LI YingShuang, ZHANG YuKe, HUANG KeHui, ZHANG YuanLi, FANG XiaoMei, RUAN RenWu, YI ZeLin   

  1. College of Agronomy and Biotechnology, Southwest University, Chongqing 400715
  • Received:2018-01-15 Online:2018-07-16 Published:2018-07-16

摘要: 【目的】通过研究硅肥对甜荞倒伏和产量相关性状的影响,筛选甜荞栽培最适施硅量,为其实现高产、稳产、抗倒伏提供参考。【方法】以宁荞1号(中抗倒伏)为试验材料,2015—2016年在西南大学歇马科研基地进行田间试验,试验设置基施0(CK)、100 kg·hm-2(S1)、200 kg·hm-2(S2)、300 kg·hm-2(S3)和400 kg·hm-2(S4)5种施硅量梯度(SiO225%),研究各生育阶段不同器官硅含量及倒伏和产量相关指标。【结果】(1)根中硅含量高于茎,从盛花期到成熟期先增后减,在灌浆期达到最大值,并且随着施硅量的增加而增加;茎中硅含量从盛花期到成熟期逐渐增加,随着施硅量增加先增后减。(2)总根长、总根表面积、平均根直径和根尖数从盛花期到成熟期逐渐增加;根表面积随施硅量的增加而增加;平均根直径和根尖数随着施硅量增加先增加后减少,S2处理达到最大值。(3)茎秆基部第二节间长度、直径、鲜重和抗折力从盛花期到成熟期逐渐增加;茎秆基部第二节间长度、直径随施硅量的增加而增加;茎秆基部第二节间鲜重和抗折力随着施硅量的增加先增加后减少,均在S3处理达到最大值。(4)木质素含量从盛花期到成熟期逐渐增加,4CL、PAL和CAD活性从盛花期到成熟期先升后降,在灌浆期达到最大值;木质素含量,4CL、PAL和CAD活性随着施硅量的增加先升后降,在S3处理达到最大值。(5)硅肥降低甜荞倒伏级别,显著减小倒伏率;当施硅量在300—400 kg·hm-2时,甜荞倒伏时期推迟到成熟期。(6)产量、单株粒重和千粒重随着硅肥施用量的增加先增后减;单株粒数随着硅肥施用量的增加而增加。【结论】本试验条件下,硅肥基施300 kg·hm-2效果最佳,可在实际生产中推广应用。

关键词: 甜荞, 硅, 根, 茎秆, 抗倒伏, 产量

Abstract: 【Objective】 This study was aimed to obtain the optimum silicon fertilizer application rate by studying lodging and yield related factors of common buckwheat (F. esculentum), so as to provide a theoretical basis for productive, stable yield and lodging resistance cultivation. 【Method】 The field experiments with five levels of silicon fertilizer treatments (SiO2 application rates of CK, S1, S2, S3 and S4 were 0, 100, 200, 300 and 400 kg·hm-2) were conducted in 2015 and 2016 at the Xiema Experimental Station, Southwest University, China. Ningqiao 1, a moderate lodging resistance cultivar of common buckwheat, was used in this study. The silicon content in root and culm, lodging and yield related factors were measured and analyzed. 【Result】 (1) The silicon content in root was more than that of culm; the silicon content in root increased and then decreased from full bloom to maturity stage, and the maximum value obtained at filling stage. The silicon content in root increased gradually with the increase of silicon application rate. The silicon content in culm increased from full bloom to maturity stage and it was increased and then decreased with the increase of silicon application rate. (2) The total root length, total root surface area, average root diameter and number of root tips increased gradually from full bloom stage to maturity stage. The total root surface area increased with the increase of silicon application rate. The average root diameter and number of root tips increased and then decreased with the increase of silicon application rate, and the maximum value obtained under the S2 treatment. (3) Length, diameter, fresh weight and breaking resistance of the base second internode of culm increased from full bloom to maturity stage. The length and diameter of the base second internode of culm increased with the increase of silicon application rate. The fresh weight and breaking resistance of the base second internode of culm increased and then decreased with the increase of silicon application rate, and the maximum value was obtained under the S3 treatment. (4) The lignin content increased from full bloom to maturity stage. 4CL, PAL, and CAD (4-coumarate: CoA ligase, phenylalanine ammonia-lyase and cinnamyl alcohol dehydrogenase) activity increased and then decreased from full bloom to maturity stage, and the maximum value obtained at filling stage. The lignin content and 4CL, PAL, CAD activity increased and then decreased with the increase of silicon fertilizer application rate, and the maximum value obtained under the S3 treatment. (5) Silicon fertilizer reduced the lodging degree and decreased the lodging percentage significantly. The lodging stage of common buckwheat occurred at maturity when silicon fertilizer application rate ranged from 300 to 400 kg·hm-2. (6) The yield, grain weight per plant and thousand grain weight increased and then decreased with the increase of silicon fertilizer application rate and grain number per plant increased with the increase of silicon fertilizer application rate. 【Conclusion】 In this research, the best silicon application rate was 300 kg·hm-2.

Key words: common buckwheat, silicon, root, culm, lodging resistance